In:
Applied Physics Letters, AIP Publishing, Vol. 104, No. 11 ( 2014-03-17)
Abstract:
The orientation dependence of the piezoresistive effect of p-type single crystalline 3C-SiC thin film grown on a (100)Si wafer was characterized. The longitudinal, transverse gauge factors in [100] orientation, and longitudinal gauge factor in [110] orientation were found to be 5.8, −5.2, and 30.3, respectively. The fundamental piezoresistive coefficients π11, π12, and π44 of p-type 3C-SiC were obtained to be 1.5 × 10−11 Pa−1, −1.4 × 10−11 Pa−1, and 18.1 × 10−11 Pa−1, respectively. From these coefficients, the piezoresistive effect in any crystallographic orientation in p-type single crystalline 3C-SiC can be estimated, which is very valuable in designing micro-mechanical sensors.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2014
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0