In:
Applied Physics Letters, AIP Publishing, Vol. 104, No. 8 ( 2014-02-24)
Abstract:
We have designed and fabricated a half-wavelength reflection line resonator that consists of a pair of coupled microstrip lines on a GaAs/AlGaAs heterostructure. By changing the top gate voltage on a small square with a two-dimensional electron gas under the resonator, the quality factor was tuned over a large range from 2700 to below 600. Apart from being of fundamental interest, this gate modulation technique has the potential for use in on-chip resonator applications.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2014
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0