In:
Applied Physics Letters, AIP Publishing, Vol. 101, No. 22 ( 2012-11-26)
Abstract:
n-ZnO/p-Si heterojunction light emitting devices with and without a NiO intermediate layer were fabricated using a radio frequency magnetron sputtering system. Electroluminescence measurements revealed that the device with the NiO intermediate layer exhibits a sharper and stronger orange emission peaks at ∼670 nm compared with that of the device without the NiO layer. And the light output-current characteristic of the n-ZnO/NiO/p-Si heterojunction device follows a nearly linear relationship (L ∝ I) rather than the superlinear relationship (L ∝ I1.5) for the n-ZnO/p-Si heterojunction device. This work indicates that the NiO intermediate layer could effectively improve the performance of the n-ZnO/p-Si heterojunction light emitting device.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2012
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0