In:
Journal of Applied Physics, AIP Publishing, Vol. 87, No. 3 ( 2000-02-01), p. 1287-1290
Abstract:
We report optical properties of AlxGa1−xP (0⩽x⩽0.52) alloys grown by gas source molecular-beam epitaxy on S-doped GaP(001) substrates. Room-temperature pseudodielectric function spectra from 1.5 to 6.0 eV were obtained by spectroscopic ellipsometry. By applying the parabolic-band critical point model to numerically calculated second energy derivatives of these spectra, we obtained accurate room-temperature values of the E1, E0′, E2, and E2′ critical point energies and their dependence on composition x.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2000
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5