In:
Applied Physics Letters, AIP Publishing, Vol. 100, No. 12 ( 2012-03-19)
Abstract:
Heterojunction solar cell structures employing InGaAsSbN (Eg ∼ 1 eV) base regions are grown lattice-matched to GaAs substrates using metalorganic vapor phase epitaxy. Room temperature (RT) photoluminescence (PL) measurements indicate a peak spectral emission at 1.04 eV and carrier lifetimes of 471–576 ps are measured at RT from these structures using time-resolved PL techniques. Fabricated devices without anti-reflection coating demonstrate a peak efficiency of 4.58% under AM1.5 direct illumination. Solar cells with a 250 nm-thick InGaAsSbN base layer exhibit a 17% improvement in open circuit voltage (Voc), 14% improvement in fill factor, and 12% improvement in efficiency over the cells with a thicker (500 nm-thick) base layer.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2012
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0