In:
Applied Physics Letters, AIP Publishing, Vol. 100, No. 2 ( 2012-01-09)
Abstract:
The switching layer with Si interfusion is investigated to improve the electrical characteristics of WOX resistance random access memory (RRAM). The WOX has attracted extensive attention for RRAM because it can form by converting the surface of the W-plug with a current complementary metal oxide semiconductor (CMOS) compatible thermal oxidation process. In general, the resistance switching behavior of WOX-RRAM devices is unstable because the diverse oxidation state provided the stochastic conduction paths. In this research, the Si interfusion can effectively localize the filament conduction path in WOX resistance switching layer because the tungsten filament path is limited by SiOX in the WSiOX film during the forming process.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2012
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0