In:
Journal of Applied Physics, AIP Publishing, Vol. 69, No. 8 ( 1991-04-15), p. 6037-6039
Abstract:
Electron-paramagnetic-resonance (EPR) measurements were performed in the temperature range T=1.3–100 K in samples of the semimagnetic Pb1−x−ySnyMnxTe semiconductor with carrier concentrations p=1.6×1019−1.4×1021 cm−3. Magnetization and Hall effect were also measured. Compositions in the range 0.12 & lt;y & lt;0.72 and x=0.02, 0.04, and 0.06 were studied. We found a strong influence of the carrier concentration on the temperature dependence of the width of EPR line (ΔH). A very rapid increase of ΔH with increasing temperature is observed in the samples with high carrier concentrations: p=5.5, 6.8, and 14×1020 cm−3. The magnitude of this effect is strongly reduced in the sample with the carrier concentration p=2.85×1020 cm−3. In n- and p-type samples with the lowest carrier concentrations (p≂2×1019 cm−3), no temperature dependence of ΔH is observed at high temperature. The strong effect of the carrier concentration on ΔH can be understood, in agreement with magnetic measurements, as a result of the two-carrier (light for p & lt;pc=3×1020 cm−3 and very heavy, available only for p ≳ pc) Korringa relaxation mechanism.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1991
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
