In:
Applied Physics Letters, AIP Publishing, Vol. 95, No. 26 ( 2009-12-28)
Abstract:
Tensile-strained Si pillars are desired to achieve three-dimensional (3D) transistors with high speed. Effects of ultraviolet (UV) light irradiation on tensile strains in Si pillars covered with SiN:H stress-liners are investigated as a function of the wavelength (172–436 nm). Tensile-stress enhancement is found at specific wavelengths (200–330 nm) under low-temperature heating (400 °C), where dehydrogenation in SiN:H is clearly detected by infrared absorption measurements. On the other hand, equilibrium dehydrogenation by high-temperature heating ( & gt;700 °C) without UV-irradiation does not cause tensile-stress enhancement. This nonequilibrium dehydrogenation at low temperatures opens up possibility of 3D transistors with high carrier mobility.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2009
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0