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Pulsed-electron-beam annealing of ion-implantation damage

Greenwald, A. C. ; Kirkpatrick, A. R. ; Little, R. G. ; [et al.]

AIP Publishing ; 1979

In: Journal of Applied Physics Vol. 50, No. 2 ( 1979-02-01), p. 783-787

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In: Journal of Applied Physics, AIP Publishing, Vol. 50, No. 2 ( 1979-02-01), p. 783-787

Abstract: Short-duration high-intensity pulsed electron beams have been used to anneal ion-implantation damage in silicon and to electrically activate the dopant species. Lattice regrowth and dopant activation were determined using 4He+ backscattering, SEM, TEM, and device performance characteristics as diagnostic techniques. The annealing mechanism is believed to be liquid-phase epitaxial regrowth initiating from the substrate. The high-temperature transient pulse produced by the electron beam causes the dopant to diffuse rapidly in the region where the liquid state is achieved.

Type of Medium: Online Resource

ISSN: 0021-8979 , 1089-7550

URL: Article

DOI: 10.1063/1.326045

Language: English

Publisher: AIP Publishing

Publication Date: 1979

detail.hit.zdb_id: 220641-9

detail.hit.zdb_id: 3112-4

detail.hit.zdb_id: 1476463-5

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