In:
Journal of Applied Physics, AIP Publishing, Vol. 105, No. 6 ( 2009-03-15)
Abstract:
We reported on organic thin-film transistors (OTFTs) with high dielectric constant polymer, poly(2,2,2-trifluoroethyl methacrylate) (PTFMA), as the gate dielectric. In top-contact OTFTs, the field-effect mobility was enhanced by applying a dielectric buffer layer poly(α-methylstyrene) to the bare PTFMA. After improving interfacial affinity within the active layer/dielectrics, deposited pentacene grain size and device performance were enhanced dramatically. The corresponding mobility, threshold voltage, and on/off current ratio were 0.70 cm2 V−1 s−1, −10.5 V, and 5.4×105, respectively. The moderately improved interface also suppressed the hole-trapping effect, which led to less hysteresis and minimized threshold voltage shift.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2009
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5