In:
Applied Physics Letters, AIP Publishing, Vol. 92, No. 15 ( 2008-04-14)
Abstract:
We have performed magnetoresistivity measurements ρxx(B) on an AlGaAs∕GaAs high electron mobility transistor (HEMT) structure at high temperatures T. The observed positive magnetoresistance (MR) in the HEMT structure can be greatly enhanced simply by increasing the driving current. At T=80K and B=6T, the MR value can be increased from ∼150% to 4000%, almost a 30-fold increase when a large current of 40μA is applied. Such results are due to electron heating effects and our data lay the foundation for practical magnetic device applications which can be readily combined with high-speed electronics, high-frequency amplifiers, and radar using the mature GaAs-based HEMT technology.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2008
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0