In:
Applied Physics Letters, AIP Publishing, Vol. 90, No. 2 ( 2007-01-08)
Abstract:
The authors report on the achievement of narrow ultraviolet emission using GaN∕AlGaN quantum wells grown by metal organic vapor phase epitaxy. The origin of the inhomogeneous broadening of the emission is explained by means of micro-photoluminescence and atomic force microscopy measurements. The effect of the well/barrier interface roughness on the linewidth is found to be marginal, while the impact of Al composition fluctuations of the barriers is highly critical. Emission linewidths as small as 5meV at 10K are obtained by decreasing the aluminum concentration fluctuations in the AlGaN barrier.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
