In:
Applied Physics Letters, AIP Publishing, Vol. 83, No. 4 ( 2003-07-28), p. 755-757
Abstract:
We describe the growth of InGaN quantum dots (QDs) by metalorganic vapor phase epitaxy. A thin InGaN epilayer is grown on a GaN buffer layer and then annealed at the growth temperature in molecular nitrogen inducing quantum dot formation. Microphotoluminescence studies of these QDs reveal sharp peaks with typical linewidths of ∼700 μeV at 4.2 K, the linewidth being limited by the spectral resolution. Time-resolved photoluminescence suggests that the excitons in these structures have lifetimes in excess of 2 ns at 4.2 K.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2003
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0