In:
Applied Physics Letters, AIP Publishing, Vol. 78, No. 2 ( 2001-01-08), p. 183-185
Abstract:
In order to discuss the local structure of an optically active center in Er-doped Si thin film, site-selective x-ray absorption fine structure (XAFS) analysis using x-ray-excited optical luminescence was performed. The XAFS spectrum at the Er LIII edge was obtained from the x-ray photon energy dependence of the peak intensity of infrared luminescence due to Er intra-4f transition. Although conventional XAFS measurement analyzes the average structure of all of the Er, this method intrinsically provides structural information for only optically active Er. A broad 2p–5d resonant peak in the site-selective XAFS spectrum is reproduced by a density-of-state calculation of a distorted ErO6 cluster, assuming an Er transformation from an octahedral center of 0.25 Å.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2001
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0