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    Epitaxial layer transfer by bond and etch back of porous Si
    AIP Publishing ; 1994
    In:  Applied Physics Letters Vol. 64, No. 16 ( 1994-04-18), p. 2108-2110
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 64, No. 16 ( 1994-04-18), p. 2108-2110
    Abstract: We demonstrate a novel method for bond and etch back silicon on insulator in which an epitaxial Si layer over porous Si is transferred onto a dissimilar substrate by bonding and etch back of porous Si. The highest etching selectivity (100 000:1) between the porous Si and the epitaxial layer is achieved by the alkali free solution of HF, H2O2, and H2O which is essential for this single etch-stop method to produce a submicron-thick active layer with superior thickness uniformity (473±14 nm) across a 5 in. silicon-on-insulator wafer.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.111698
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1994
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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