In:
Applied Physics Letters, AIP Publishing, Vol. 62, No. 20 ( 1993-05-17), p. 2578-2580
Abstract:
Two heavily carbon doped InGaAs samples (2.20×1019 and 1.92×1019 cm−3) with low In mol fractions (1% and 8%) were annealed with or without silicon nitride caps in H2 containing 0.3% AsH3 over the temperature range 5000–800 °C. Hall effect, secondary ion mass spectroscopy, double crystal x-ray diffraction, and integrated photoluminescence measurements showed that H outdiffuses over the annealing temperature range when the films were capped with silicon nitride. However, there was almost no net H outdiffusion for uncapped samples annealed in the same ambient and temperature range. Recombination centers formed during high temperature anneals in samples with less In (1%), but did not appear to form as readily in the one with more In (8%).
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1993
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
