In:
Applied Physics Letters, AIP Publishing, Vol. 61, No. 1 ( 1992-07-06), p. 87-89
Abstract:
The hole concentrations and lattice mismatch with the GaAs substrate of heavily carbon-doped epilayers (4.7×1019 and 9.8×1019 cm−3) were increased and the mobilities were decreased as compared with the as-grown samples by rapid thermal annealing silicon nitride capped samples at temperatures from 500 to 900 °C. However, for the more heavily doped sample, the hole concentration, mobility, and lattice mismatch decreased with increasing annealing temperature for annealing temperatures higher than 700 °C, but the hole concentration and lattice mismatch were still larger than those of the as-grown samples. Secondary ion mass spectroscopy results showed that annealing produced no change in the C concentration or distribution, but the hydrogen concentration decreased. Cross-sectional transmission electron microscopy indicated that no mismatch dislocations formed at the interface.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
1992
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
