In:
Nanoscale, Royal Society of Chemistry (RSC), Vol. 14, No. 17 ( 2022), p. 6331-6338
Abstract:
We demonstrate that tungsten disulphide (WS 2 ) with thicknesses ranging from monolayer (ML) to several monolayers can be grown on SiO 2 /Si, Si, and Al 2 O 3 by pulsed direct current-sputtering. The presence of high quality monolayer and multilayered WS 2 on the substrates is confirmed by Raman spectroscopy since the peak separations between the A 1g -E 2g and A 1g -2LA vibration modes exhibit a gradual increase depending on the number of layers. X-ray diffraction confirms a textured (001) growth of WS 2 films. The surface roughness measured with atomic force microscopy is between 1.5 and 3 Å for the ML films. The chemical composition WS x ( x = 2.03 ± 0.05) was determined from X-ray Photoelectron Spectroscopy. Transmission electron microscopy was performed on a multilayer film to show the 2D layered structure. A unique method for growing 2D layers directly by sputtering opens up the way for designing 2D materials and batch production of high-uniformity and high-quality (stochiometric, large grain sizes, flatness) WS 2 films, which will advance their practical applications in various fields.
Type of Medium:
Online Resource
ISSN:
2040-3364
,
2040-3372
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2022
detail.hit.zdb_id:
2515664-0