In:
Scientific Reports, Springer Science and Business Media LLC, Vol. 6, No. 1 ( 2016-01-27)
Abstract:
Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS 2 . This transition requires atomic-layer-precision thinning of bulk MoS 2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS 2 in SF 6 + N 2 plasmas with low-energy ( 〈 0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS 2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO 2 substrate and the remaining MoS 2 layers. The etching rates can be tuned to achieve complete MoS 2 removal and any desired number of MoS 2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS 2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes and may be applicable for a broader range of 2D materials and intended device applications.
Type of Medium:
Online Resource
ISSN:
2045-2322
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2016
detail.hit.zdb_id:
2615211-3
