In:
Scientific Reports, Springer Science and Business Media LLC, Vol. 7, No. 1 ( 2017-09-11)
Abstract:
Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeO x film in a simple W/GeO x /W structure and understanding of switching mechanism through redox reaction in H 2 O 2 /sarcosine sensing (or changing Ge°/Ge 4+ oxidation states under external bias) have been reported for the first time. Oxidation states of Ge 0 /Ge 4+ are confirmed by both XPS and H 2 O 2 sensing of GeO x membrane in electrolyte-insulator-semiconductor structure. Highly repeatable 1000 dc cycles and stable program/erase (P/E) endurance of 〉 10 6 cycles at a small pulse width of 100 ns are achieved at a low operation current of 0.1 µA. The thickness of GeO x layer is found to be increased to 12.5 nm with the reduction of polycrystalline grain size of 〈 7 nm after P/E of 10 6 cycles, which is observed by high-resolution TEM. The switching mechanism is explored through redox reaction in GeO x membrane by sensing 1 nM H 2 O 2 , which is owing to the change of oxidation states from Ge 0 to Ge 4+ because of the enhanced O 2− ions migration in memory device under external bias. In addition, sarcosine as a prostate cancer biomarker with low concentration of 50 pM to 10 µM is also detected.
Type of Medium:
Online Resource
ISSN:
2045-2322
DOI:
10.1038/s41598-017-11657-4
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2017
detail.hit.zdb_id:
2615211-3