In:
Small, Wiley, Vol. 16, No. 46 ( 2020-11)
Abstract:
Memristor, processing data storage and logic operation all‐in‐one, is an advanced configuration for next generation computer. In this work, a bismuth doped tin oxide (Bi:SnO 2 ) memristor with ITO/Bi:SnO 2 /TiN structure has been fabricated. Observing from transmission electron microscope (TEM) for the Bi:SnO 2 device, it is found that the bismuth atoms surround the surface of SnO 2 crystals to form the coaxial Bi conductive filament. The self‐compliance current, switching voltage and operating current of Bi:SnO 2 memristor are remarkably smaller than that of ITO/SnO 2 /TiN device. With the content of 4.8% Bi doping, the SET operating power of doped device is 16 µW for ITO/Bi:SnO 2 /TiN memory cell of 0.4 × 0.4 µm 2 , which is cut down by two orders of magnitude. Hence, the findings in this study suggest that Bi:SnO 2 memristors hold significant potential for application in low power memory and broadening the understanding of existing resistive switching (RS) mechanism.
Type of Medium:
Online Resource
ISSN:
1613-6810
,
1613-6829
DOI:
10.1002/smll.202004619
Language:
English
Publisher:
Wiley
Publication Date:
2020
detail.hit.zdb_id:
2168935-0