In:
Surface and Interface Analysis, Wiley, Vol. 36, No. 3 ( 2004-03), p. 259-263
Abstract:
The sputter damage profiles of Si(100) by low‐energy O 2 + and Ar + ion bombardment at various angles of incidence were measured using medium‐energy ion scattering spectroscopy. It was observed that the damaged Si surface layer can be minimized down to 0.5–0.6 nm with grazing‐incident 500 eV Ar + and O 2 + ions at 80°. To illustrate how the damaged layer thickness can be decreased down to 0.5 nm, molecular dynamics simulations were used. The SIMS depth resolution estimated with trailing‐edge decay length for a Ga delta‐layer in Si with grazing‐incident 650 eV O 2 + was 0.9 nm, which is in good agreement with the measured damaged layer thickness. Copyright © 2004 John Wiley & Sons, Ltd.
Type of Medium:
Online Resource
ISSN:
0142-2421
,
1096-9918
Language:
English
Publisher:
Wiley
Publication Date:
2004
detail.hit.zdb_id:
2023881-2
detail.hit.zdb_id:
164045-8