In:
physica status solidi (RRL) – Rapid Research Letters, Wiley, Vol. 13, No. 12 ( 2019-12)
Abstract:
Herein, the gamma‐ray irradiation effect on ferroelectric HfAlO x capacitors for biomedical and space applications is investigated. The experimental results focus on the observation of ferroelectric polarization characteristics in support of different defect mechanisms induced by annealing, endurance cycling, and gamma‐ray irradiation. It is found that the HfAlO x with low Al doping of 6.5% become more vulnerable to radiation exposure, but a remarkable improvement in 9%‐Al‐doped HfAlO x due to less oxygen vacancies is demonstrated. In addition, the results also confirm that the fatigue property of ferroelectric HfAlO x capacitor is determined by the electric‐stress‐induced defect during endurance cycling, not mainly contributed by irradiation damage, which shows the potential for memory applications in rigorous irradiation environment.
Type of Medium:
Online Resource
ISSN:
1862-6254
,
1862-6270
DOI:
10.1002/pssr.201900414
Language:
English
Publisher:
Wiley
Publication Date:
2019
detail.hit.zdb_id:
2260948-9
detail.hit.zdb_id:
2259465-6