In:
physica status solidi c, Wiley, Vol. 5, No. 6 ( 2008-05), p. 1606-1608
Abstract:
High temperature growth was investigated as a way of improving the crystallinity and surface morphology of the gallium hydride vapor phase epitaxy (GaH‐VPE) crystal growth method. In this method, gallium hydride (GaH x : x=1, 2, 3) is characteristically used as a Ga source to grow GaN crystals. We previously confirmed that the growth rate of GaN increased with GaH x supply and could attain almost the same rate as that of the hydride vapor phase epitaxy (HVPE) method. However, an improvement of the surface morphology and crystallinity of GaN crystals was required. In the present study, the dependence of growth temperature on the crystallinity and the surface morphology of grown crystals was investigated, resulting in both a flat surface and an improvement in crystallinity at temperatures higher than 1150 °C. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.200778520
Language:
English
Publisher:
Wiley
Publication Date:
2008
detail.hit.zdb_id:
2105580-4
detail.hit.zdb_id:
2102966-0