In:
physica status solidi (a), Wiley, Vol. 207, No. 6 ( 2010-06), p. 1393-1396
Abstract:
We demonstrated activation annealing of Mg‐doped p‐type Al 0.17 Ga 0.83 N in different gases. The hole concentration of Al 0.17 Ga 0.83 N annealed in oxygen is higher than that annealed in nitrogen or air. A hole concentration of 1.3 × 10 16 cm −3 at room temperature was achieved by annealing in oxygen flow at 900 °C. Secondary ion mass spectroscopy shows that hydrogen dissociation from Mg‐doped Al 0.17 Ga 0.83 N is found to be enhanced by annealing in a flow of oxygen, compared with annealing in a flow of nitrogen. We confirmed the effect of activation annealing in oxygen flow on the performance of UV light‐emitting diode (LED). At a DC current of 100 mA, the output power of the LED annealed in oxygen flow at 900 °C is four times higher than that of the LED annealed in nitrogen flow at 800 °C.
Type of Medium:
Online Resource
ISSN:
1862-6300
,
1862-6319
DOI:
10.1002/pssa.200983448
Language:
English
Publisher:
Wiley
Publication Date:
2010
detail.hit.zdb_id:
1481091-8
detail.hit.zdb_id:
208850-2