In:
Israel Journal of Chemistry, Wiley, Vol. 54, No. 5-6 ( 2014-06), p. 568-585
Kurzfassung:
In this contribution, we describe the working principles of organic field effect transistors. To place it in context, we start with a brief description of some aspects of semiconductor field effect transistors. We then describe the standard structure and properties of laterally aligned field effect transistors and at the end, touch upon some properties of the newly developed vertically stacked field effect transistors.
Materialart:
Online-Ressource
ISSN:
0021-2148
,
1869-5868
DOI:
10.1002/ijch.v54.5/6
DOI:
10.1002/ijch.201400040
Sprache:
Englisch
Verlag:
Wiley
Publikationsdatum:
2014
ZDB Id:
2066481-3