In:
Global Challenges, Wiley, Vol. 6, No. 7 ( 2022-07)
Abstract:
In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al 2 O 3 ‐based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al 2 O 3 /IZO multilayer transparent memory has a transmittance of at least 65% in the wavelength range of 400–900 nm. In addition, the Al 2 O 3 /IZO multilayer transparent memory can achieve an electroforming voltage that is 35.7% lower than that of ITO/pure‐Al 2 O 3 /IZO transparent memory. The fabricated Al 2 O 3 /IZO multilayer transparent memory exhibits typical bipolar resistive switching behavior, regardless of the number of IZO interlayers. Also, the fabricated Al 2 O 3 /IZO multilayer transparent memory has a low operating voltage within ±1.5 V. In addition, a flexible Al 2 O 3 /IZO multilayer transparent memory is fabricated using the same process on ITO‐coated polyethylene terephthalate. The fabricated flexible transparent memory also maintains the resistive switching characteristics during the bending state.
Type of Medium:
Online Resource
ISSN:
2056-6646
,
2056-6646
DOI:
10.1002/gch2.202100118
Language:
English
Publisher:
Wiley
Publication Date:
2022
detail.hit.zdb_id:
2844367-6
