In:
ChemSusChem, Wiley, Vol. 6, No. 3 ( 2013-03), p. 481-486
Abstract:
Thin‐film photovoltaic devices (PVs) were prepared by selenization using oleylamine‐capped Cu(In,Ga)Se 2 (CIGS) nanocrystals sintered at a high temperature ( 〉 500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed in the devices studied was 5.1 % under air mass 1.5 global (AM 1.5 G) illumination, obtained with [Ga]/[In+Ga] =0.32. The variation in PCE with composition is partly a result of bandgap tuning and optimization, but the main influence of nanocrystal composition appeared to be on the quality of the sintered films. The [Cu]/[In+Ga] content was found to be strongly influenced by the [Ga]/[In+Ga] concentration, which appears to be correlated with the morphology of the sintered film. For this reason, only small changes in the [Ga]/[In+Ga] content resulted in significant variations in device efficiency.
Type of Medium:
Online Resource
ISSN:
1864-5631
,
1864-564X
DOI:
10.1002/cssc.201200677
Language:
English
Publisher:
Wiley
Publication Date:
2013
detail.hit.zdb_id:
2411405-4
detail.hit.zdb_id:
2389988-8