In:
Advanced Materials Interfaces, Wiley, Vol. 9, No. 15 ( 2022-05)
Abstract:
Molybdenum disulfide (MoS 2 ) synthesis methods have become diverse and enable wafer‐scale growth for high‐performance optoelectronic applications. However, there has been limited research on the carrier transports of wafer‐scale deposited MoS 2 thin‐film transistors (TFTs). In this paper, the first demonstration of the electron transport mechanism in top‐gated polycrystalline crystalline MoS 2 (poly‐MoS 2 ) TFTs grown by a wafer‐scale deposition method is presented. The MoS 2 is synthesized via radio frequency (RF) magnetron sputtering and gas flow chemical vapor sulfurization. A surface analysis is performed to determine the basic ingredients and grain size of the grown MoS 2 . Furthermore, the electrical properties and charge transport behaviors of the poly‐MoS 2 TFTs are characterized using current–voltage measurement at low temperatures (93–273 K). The extracted parameters (e.g., field‐effect mobility, contact and channel resistance, activation energy, and hopping distance) and 2D Mott variable range hopping (VRH) of the poly‐MoS 2 TFTs support the notion that the primary mechanism of carrier transport in the poly‐MoS 2 TFTs involves thermally active hopping and grain effects. For advanced poly‐MoS 2 ‐based devices, an increase of grain size will be the principal factor using the relationship between the grain size and electron hopping distance of poly‐MoS 2 .
Type of Medium:
Online Resource
ISSN:
2196-7350
,
2196-7350
DOI:
10.1002/admi.202102360
Language:
English
Publisher:
Wiley
Publication Date:
2022
detail.hit.zdb_id:
2750376-8
