In:
Advanced Materials, Wiley
Abstract:
Polarimetric photodetector can acquire higher resolution and more surface information of imaging targets in complex environments due to the identification of light polarization. To date, the existing technologies yet sustain the poor polarization sensitivity ( 〈 10), far from market application requirement. Here, the photovoltaic detectors with polarization‐ and gate‐tunable optoelectronic reverse phenomenon are developed based on semimetal 1T′‐MoTe 2 and ambipolar WSe 2 . The device exhibits gate‐tunable reverse in rectifying and photovoltaic characters due to the directional inversion of energy band, yielding a wide range of current rectification ratio from 10 −2 to 10 3 and a clear object imaging with 100 × 100 pixels. Acting as a polarimetric photodetector, the polarization ratio (PR) value can reach a steady state value of ∼30, which is compelling among the state‐of‐the‐art 2D‐based polarized detectors. The sign reversal of polarization‐sensitive photocurrent by varying the light polarization angles is also observed, that can enable the PR value with a potential to cover possible numbers (1→+∞/‐∞→‐1). This work develops a photovoltaic detector with polarization‐ and gate‐tunable optoelectronic reverse phenomenon, making a significant progress in polarimetric imaging and multi‐function integration applications. This article is protected by copyright. All rights reserved
Type of Medium:
Online Resource
ISSN:
0935-9648
,
1521-4095
DOI:
10.1002/adma.202309371
Language:
English
Publisher:
Wiley
Publication Date:
2023
detail.hit.zdb_id:
1474949-X
