In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 5R ( 1996-05-01), p. 2544-
Kurzfassung:
We report on molecular beam epitaxial (MBE) growth of high-quality In 0.15 Ga 0.85 As quantum wells (QWs) on (110) GaAs surfaces. The (110) surfaces are prepared by cleaving (001) GaAs substrates in air. The optimized growth condition is searched by changing the substrate temperature for the growth of In 0.15 Ga 0.85 As layers. We have found that the substrate temperature around 430°C is crucial to obtain the good surface morphology without facet structures and the sharp PL peak of an In 0.15 Ga 0.85 As QW.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.2544
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1996
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7