In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 3R ( 1994-03-01), p. 1577-
Kurzfassung:
Ultra-LSIs (ULSIs) now require innovative microfabrication processes to achieve gigabit-scale integration. In order to meet this requirement, a new surface-imaging process involving the dry development of polysilane resist is investigated for use in X-ray lithography from the viewpoints of achieving a dry development process and of improving resolution. Poly(cyclohexylmethylsilane) (PCHMS) is used for the dry-developing surface-imaging layer. We confirm that PCHMS has positive-tone characteristics by ultraviolet (UV) absorption spectroscopy and photon-stimulated ion desorption (PSD) measurements. PSD analyses also clarify that chain side groups of polysilane are desorbed prior to Si–Si backbone desorption, and that heating drastically improves dry-development sensitivity. PCHMS patterns replicated by dry-development can be transferred to the bottom layer resist by O 2 reactive-ion etching and, as a result, high-aspect-ratio resist patterns can be replicated. The possibility of applying this process to X-ray projection lithography is also discussed.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.1577
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1994
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
