In:
Angewandte Chemie, Wiley, Vol. 129, No. 30 ( 2017-07-17), p. 8827-8831
Kurzfassung:
In many heterogeneous catalysts, the interaction of supported metal species with a matrix can alter the electronic and morphological properties of the metal and manipulate its catalytic properties. III‐nitride semiconductors have a unique ability to stabilize ultra‐small ruthenium (Ru) clusters (ca. 0.8 nm) at a high loading density up to 5 wt %. n‐Type III‐nitride nanowires decorated with Ru sub‐nanoclusters offer controlled surface charge properties and exhibit superior UV‐ and visible‐light photocatalytic activity for ammonia synthesis at ambient temperature. A metal/semiconductor interfacial Schottky junction with a 0.94 eV barrier height can greatly facilitate photogenerated electron transfer from III‐nitrides to Ru, rendering Ru an electron sink that promotes N≡N bond cleavage, and thereby achieving low‐temperature ammonia synthesis.
Materialart:
Online-Ressource
ISSN:
0044-8249
,
1521-3757
DOI:
10.1002/ange.v129.30
DOI:
10.1002/ange.201703301
Sprache:
Englisch
Verlag:
Wiley
Publikationsdatum:
2017
ZDB Id:
505868-5
ZDB Id:
506609-8
ZDB Id:
514305-6
ZDB Id:
505872-7
ZDB Id:
1479266-7
ZDB Id:
505867-3
ZDB Id:
506259-7
