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  • Articles  (238)
  • 2015-2019  (238)
  • 2017  (238)
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  • Articles  (238)
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  • 2015-2019  (238)
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  • 1
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    Analyzing the channel dopant profile in next-generation FinFETs via atom probe tomography (2017)
    Elsevier
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    Publication Date: 2017-12-28
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): Andrew J. Martin, Yong Wei, Andreas Scholze Dopant analysis in next-generation semiconductor devices has become increasingly difficult for traditionally used analytical techniques. Atom probe tomography has been viewed by some as a possible solution to these challenges because of its three-dimensional capabilities, forcing the atom probe to mature at a rapid pace in this particular field. This work presents a well-rounded analysis of how APT can be used to examine B dopant diffusion into the channel of a next-generation FinFET, where the channel dimensions and the number of dopants atoms are significantly smaller than any devices measured by APT to date. Complimentary EELS analysis of the gate and channel provides a better understanding of how distortions and artifacts in the APT reconstruction affect the overall integrity of the dataset. Dopant measurements in the channel are confirmed through in-depth mass spectrum analysis and compared with values proposed by TCAD modeling.
    Print ISSN: 0304-3991
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 2
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    Sampling limits for electron tomography with sparsity-exploiting reconstructions (2017)
    Elsevier
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    Publication Date: 2017-12-26
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): Yi Jiang, Elliot Padgett, Robert Hovden, David A. Muller Electron tomography (ET) has become a standard technique for 3D characterization of materials at the nano-scale. Traditional reconstruction algorithms such as weighted back projection suffer from disruptive artifacts with insufficient projections. Popularized by compressed sensing, sparsity-exploiting algorithms have been applied to experimental ET data and show promise for improving reconstruction quality or reducing the total beam dose applied to a specimen. Nevertheless, theoretical bounds for these methods have been less explored in the context of ET applications. Here, we perform numerical simulations to investigate performance of ℓ 1 -norm and total-variation (TV) minimization under various imaging conditions. From 36,100 different simulated structures, our results show specimens with more complex structures generally require more projections for exact reconstruction. However, once sufficient data is acquired, dividing the beam dose over more projections provides no improvements—analogous to the traditional dose-fraction theorem. Moreover, a limited tilt range of ±75° or less can result in distorting artifacts in sparsity-exploiting reconstructions. The influence of optimization parameters on reconstructions is also discussed.
    Print ISSN: 0304-3991
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 3
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    Increasing compositional backscattered electron contrast in scanning electron microscopy (2017)
    Elsevier
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    Publication Date: 2017-12-23
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): F. Timischl, N. Inoue A method for increasing compositional or material contrast of a standard semiconductor BSE detector in a scanning electron microscope (SEM) by compensation of the topographic contrast component is proposed. Compensation is based on the physical properties of backscattered electron emission and topography information of the specimen's surface. Three analytical and semi-empirical compensation algorithms employing different physical models and approximations are implemented and compared to conventional BSE signals to show the effectivity of the proposed compensation approach.
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    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 4
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    Spectrum imaging of complex nanostructures using DualEELS: II. Absolute quantification using standards (2017)
    Elsevier
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    Publication Date: 2017-12-22
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): Alan J. Craven, Bianca Sala, Joanna Bobynko, Ian MacLaren Nanometre-sized Ti x V (1− x ) C y N z precipitates in an Fe20%Mn steel matrix with a thickness range from 14 to 40 nm are analysed using DualEELS. Their thicknesses, volumes and compositions are quantified using experimental binary standards and the process used to give robust results is described. Precisions of a few percent are achieved with accuracies that are estimated to be of a similar magnitude. Sensitivities are shown to be at 0.5–1 unit cells range in the thinnest matrix region, based on the assumption that a sub-lattice is fully populated by the element. It rises to the 1–2 unit cell range for the metals and 2–3 unit cells for the non-metal in the thickest matrix region. The sensitivities for Ti and N are greater than those for V and C respectively because the O K-edge from surface oxide needs to be separated from the V L 2,3 -edge, and the C K-edges from C in the matrix and amorphous C on the surface have to be separated from the C in the precipitate itself. Separation of the contributions from the bulk and the surface is demonstrated, showing that there is significant and detectable C in the matrix but no O, while there is significant O but little C in the surface oxide. Whilst applied to precipitates in steel in this work, the approach can be adapted to many multi-phase systems.
    Print ISSN: 0304-3991
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 5
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    Fine tuning an aberration corrected ADF-STEM (2017)
    Elsevier
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    Publication Date: 2017-12-21
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): Earl J. Kirkland Aberration correctors offer greatly enhanced resolution in electron microscopes, however can require dramatically more complicated adjustments. A method of computer adjustment of a probe forming aberration corrector in a Scanning Transmission Electron Microscope (STEM) is proposed and analyzed using image simulation. This method works directly with the image and should work well with crystalline specimens. It does not have a significant dependence on post specimen lens aberrations.
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    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 6
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    Transmission scanning electron microscopy: Defect observations and image simulations (2017)
    Elsevier
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    Publication Date: 2017-12-20
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): Patrick G. Callahan, Jean-Charles Stinville, Eric R. Yao, McLean P. Echlin, Michael S. Titus, Marc De Graef, Daniel S. Gianola, Tresa M. Pollock The new capabilities of a FEG scanning electron microscope (SEM) equipped with a scanning transmission electron microscopy (STEM) detector for defect characterization have been studied in parallel with transmission electron microscopy (TEM) imaging. Stacking faults and dislocations have been characterized in strontium titanate, a polycrystalline nickel-base superalloy and a single crystal cobalt-base material. Imaging modes that are similar to conventional TEM (CTEM) bright field (BF) and dark field (DF) and STEM are explored, and some of the differences due to the different accelerating voltages highlighted. Defect images have been simulated for the transmission scanning electron microscopy (TSEM) configuration using a scattering matrix formulation, and diffraction contrast in the SEM is discussed in comparison to TEM. Interference effects associated with conventional TEM, such as thickness fringes and bending contours are significantly reduced in TSEM by using a convergent probe, similar to a STEM imaging modality, enabling individual defects to be imaged clearly even in high dislocation density regions. Beyond this, TSEM provides significant advantages for high throughput and dynamic in-situ characterization.
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    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 7
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    Atomic force microscopy capable of vibration isolation with low-stiffness Z-axis actuation (2017)
    Elsevier
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    Publication Date: 2017-12-17
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): Shingo Ito, Georg Schitter For high-resolution imaging without bulky external vibration isolation, this paper presents an atomic force microscope (AFM) capable of vibration isolation with its internal Z-axis (vertical) actuators moving the AFM probe. Lorentz actuators (voice coil actuators) are used for the Z-axis actuation, and flexures guiding the motion are designed to have a low stiffness between the mover and the base. The low stiffness enables a large Z-axis actuation of more than 700 µm and mechanically isolates the probe from floor vibrations at high frequencies. To reject the residual vibrations, the probe tracks the sample by using a displacement sensor for feedback control. Unlike conventional AFMs, the Z-axis actuation attains a closed-loop control bandwidth that is 35 times higher than the first mechanical resonant frequency. The closed-loop AFM system has robustness against the flexures’ nonlinearity and uses the first resonance for better sample tracking. For further improvement, feedforward control with a vibration sensor is combined, and the resulting system rejects 98.4% of vibrations by turning on the controllers. The AFM system is demonstrated by successful AFM imaging in a vibrational environment.
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    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 8
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    Wet-chemical etching of atom probe tips for artefact free analyses of nanoscaled semiconductor structures (2017)
    Elsevier
    Details
    Publication Date: 2017-12-17
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): D. Melkonyan, C. Fleischmann, A. Veloso, A. Franquet, J. Bogdanowicz, R.J.H. Morris, W. Vandervorst We introduce an innovative specimen preparation method employing the selectivity of a wet-chemical etching step to improve data quality and success rates in the atom probe analysis of contemporary semiconductor devices. Firstly, on the example of an SiGe fin embedded in SiO 2 we demonstrate how the selective removal of SiO 2 from the final APT specimen significantly improves accuracy and reliability of the reconstructed data. With the oxide removal, we eliminate the origin of shape artefacts, i.e. the formation of a non-hemispherical tip shape, that are typically observed in the reconstructed volume of complex systems. Secondly, using the same approach, we increase success rates to ∼90% for the damage-free, 3D site-specific localization of short (250 nm), vertical Si nanowires at the specimen apex. The impact of the abrupt emitter radius change that is introduced by this specimen preparation method is evaluated as being minor using field evaporation simulation and comparison of different reconstruction schemes. The Ge content within the SiGe fin as well as the 3D boron distribution in the Si NW as resolved by atom probe analysis are in good agreement with TEM/EDS and ToF-SIMS analysis, respectively.
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    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 9
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    Ion beam heating of kinetically constrained nanomaterials (2017)
    Elsevier
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    Publication Date: 2017-12-17
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): Xi Cen, Klaus van Benthem The gallium ion beam heating on electron transparent transmission electron microscopy (TEM) samples of Au/Ni bilayer films supported by SiO 2 substrates was studied by in-situ TEM combined with energy dispersive X-ray spectroscopy. Brief Ga + ion beam irradiation during sample transfer inside the focused ion beam instrument was found to induce dewetting of bilayer films. The observed morphological changes of the metal films are complemented by considerable Au diffusion through the underlying polycrystalline Ni film and adsorption at the Ni/substrate interface. In-situ heating experiments confirm that alterations of the metal bilayer films caused by ion beam irradiation are consistent with thermal annealing at 400 °C for several minutes in the absence of any ion bombardment. Ion beam damage effects equivalent to prolonged heating may pose considerable limitations to ion beam microscopy of samples with reduced dimensions. Ex-situ lift-out procedures of electron transparent samples in the absence of any ion beam irradiation lead to successful conservation of sample morphologies.
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    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 10
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    Nanometer-precise optical length measurement using near-field scanning optical microscopy with sharpened single carbon nanotube probe (2017)
    Elsevier
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    Publication Date: 2017-12-17
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): Takehiro Tachizaki, Toshihiko Nakata, Kaifeng Zhang, Ichiro Yamakawa, Shin-ichi Taniguchi We have developed and characterized a plasmon-excitation scattering-type near-field scanning optical microscope with sharpened single carbon nanotube probe. The developed microscope can optically capture differences in the refractive index of single-nanometer surface structures. Statistical analysis enabled us to estimate the precision of the optical length measurement to 1.8 nm.
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    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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