In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 10R ( 1993-10-01), p. 4472-
Abstract:
Poly-Si thin-film transistors (TFT's) have a large off-state current that is unacceptable for pixel driver application. To quickly establish an effective solution to reduce the off-state current, systematic comparison and clarification of the mechanisms of off-state current are still insufficient. We will concentrate on an experimental comparison of off-state current mechanisms between low-temperature-processed (LTP) and high-temperature-processed (HTP) poly-Si TFT devices. Since all the off-state currents are found to be divided into three regions in LTP and HTP poly-Si TFT's, they are attributable to a resistive current in region I (low gate bias), pure thermal generation in region II (low drain bias) and Frenkel-Poole emission in region III (high gate bias, drain bias).
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.4472
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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