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  • The Electrochemical Society  (5)
  • Basim, G. Bahar  (5)
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  • The Electrochemical Society  (5)
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  • 1
    Online Resource
    Online Resource
    (Invited) A Review on the Role of Slurry Chemistry on Chemically Modified Thin Film Formation for CMP Applications
    The Electrochemical Society ; 2019
    In:  ECS Meeting Abstracts Vol. MA2019-01, No. 17 ( 2019-05-01), p. 1031-1031
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2019-01, No. 17 ( 2019-05-01), p. 1031-1031
    Abstract: Chemical Mechanical Planarization (CMP) process is currently facing the challenge of planarizing larger scale wafers at an atomic scale precision with superior removal rate selectivity and zero defect focus. While the horizontal dimensions of the processed wafers (x-axis and y-axis as the wafer diameter) extend up to 300 mm, the z-axis has to be planarized to a margin of a couple of hundred nanometers. This requirement highlights the need for fundamental understanding on the surface chemistry of the layers being exposed to the planarization process in terms of their interactions with the CMP slurry chemistry. Once the behavior of the wafer surface is understood at an atomic level, the process control metrics can be tuned accordingly. This paper reviews the role of slurry chemistry in effectively modifying the top surface films of the various materials including conductors, semiconductors and insulators exposed to CMP operations in semiconductor manufacturing. Metallic films are studied in terms of their corrosion and passivation behavior [1, 2] as well as through a modeling of the energy minimization through a Cahn Hilliard Equation (CHE) approach [3] . Furthermore, formation and selectivity properties of the semiconductor materials including conventional and III-V semiconductors and insulators were investigated [4-5]. Some high-end applications where the nano-scale chemically modified films critical are: Metal CMP applications of the tungsten T-gate transistors, new barrier materials, germanium based high-speed shallow trench isolation transistors and high-power transistors and LED applications where III/V semiconductors, such as GaN, are used. Ozdemir, Basim, G.B. “Effect of Chemical Mechanical Polishing on Surface Nature of Titanium Implants FT-IR and Wettability Data of Titanium Implants Surface After Chemical Mechanical Polishing Implementation”, Data in Brief, 10 , P 20-25, 2017. Karagoz, A., and Basim, G.B. “Controlling Germanium CMP Selectivity through Slurry Mediation by Surface Active Agents”, ECS Journal of Solid State Science and Technology, CMP Special Issue, 4 (11) P5097-P5104, 2015. Karagoz, A., Sengul , , Basim, G.B., “A Cahn Hilliard Modeling of Metal Oxide Thin Films for Advanced CMP Applications”, 225 th ECS Meeting – Orlando, Florida, USA, May 11-15, 2014, ECS Transactions , 61 (17) 15-20 (2014). Karagoz, A., Craciun, V., Basim, G.B., “Characterization of Nano-Scale Protective Oxide Films_ Application on Metal Chemical Mechanical Planarization”. ECS Journal of Solid State Science and Technology, 4 (2) P1-P8, 2015. Ozbek, S., Akbar, W., Basim, G.B. “ Optimized Process Design for GaN Chemical Mechanical Planarization” ECS Journal of Solid State Science and Technology, Special Issue on GaN-Based Electronics for Power, RF, and Rad-Hard Applications, 6 -11, P S3084-S3092, 2017.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2019-01/17/1031
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2019
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  • 2
    Online Resource
    Online Resource
    A Cahn Hilliard Modeling of Metal Oxide Thin Films for Advanced CMP Applications
    The Electrochemical Society ; 2014
    In:  ECS Meeting Abstracts Vol. MA2014-01, No. 38 ( 2014-04-01), p. 1426-1426
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2014-01, No. 38 ( 2014-04-01), p. 1426-1426
    Abstract: Chemical mechanical planarization (CMP) process enables topographic selectivity through formation of a protective oxide thin film on the recessed locations of the deposited metal layer while a continuous chemical oxidation reaction is followed by mechanical abrasion takes place on the protruding locations [1]. This paper demonstrates a new approach to CMP process optimization in terms of slurry formulations by analyzing the nature of the protective metal oxide nano films and modeling their growth through a Cahn Hilliard Equation (CHE) approach [2] . The commonly utilized models on the material removal rate calculations are also revisited to address the differences from the typical approaches to the dynamic removal models at the elevated layers. In previous work we have demonstrated the formation and mechanical properties of the chemically modified metal oxide thin films in CMP and discussed the stresses develop at the interfaces delineating the stability and protective nature of the chemically altered films [3]. The preliminary model is developed on the very well established tungsten films by assuming a constant temperature and metal oxide thin film volume to apply the CHE approach. As the CMP nano metal oxide films of tungsten have been shown to be self-protective, these assumptions are valid. Thin film analyses were conducted through XRD, XRR and FTIR characterization and compared to the theoretical calculations for the modeling simulations. The atomic force microscopy surface structures observed on the tungsten wafers are shown to be predicted by the CHE approach as spinodal decomposition structures. This new modeling approach is going to help in formulating optimal slurries for the new generation CMP materials by considering not only the active material removal concept but also the very critical planarization requirement through enabling protective oxide layers for planarization. References: Kaufman, F.B., Thomson, D.B. Broadie R.E., Jaso, M.A., Guthrie, W.L., Pearson, M.B., Small, M.B., Journal of the Electrochemical Society, 138,(1991) 3460. Gamerio, M., Mischaikow, K., Wanner, T., Acta Materialia 53 (2005) 693-704. Basim, G.B., Karagoz, A., Ozdemir, Z. ECS Trans. “Metal Oxide Nano Film Characterization for CMP Optimization” 50 (39) (2013) 3-7.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2014-01/38/1426
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2014
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  • 3
    Online Resource
    Online Resource
    Metal Oxide Thin Film Characterization for New Generation Chemical Mechanical Planarization Development
    The Electrochemical Society ; 2016
    In:  ECS Meeting Abstracts Vol. MA2016-01, No. 22 ( 2016-04-01), p. 1157-1157
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2016-01, No. 22 ( 2016-04-01), p. 1157-1157
    Abstract: This study targeted to create a basis for the new generation semiconductor industry that deals with atomic scale devices and also expected to be utilized in many other fields such as advanced coatings, interfacial adhesion, biological systems i.e. corrosion prevention and enhanced biocompatibility of bio-implants and nano/bio interfaces. We focused on the accomplishments on the microelectronics applications of the CMP process as it is used for the current and future semiconductor applications, such as metal CMP applications of the tungsten T-gate transistors, high speed shallow trench isolation transistors with germanium and furthermore isolating thin films for advanced microelectronics applications such as encapsulation of the PZT arrays of the ferroelectric memory applications.  The second part focused on the applications of the CMP induced metal oxide thin films on biomaterials and conventional metals such as steel that is used for heating elements and aluminum that is being used for airplane bodies to improve the corrosion resistance. First of all, a fundamental understanding on the growth of nano-scale protective oxide thin films was studied to determine the effect of oxidizer type and proper oxidation time on the changes in surface properties of the thin films. The preliminary model was developed on the very well established tungsten, which is being utilized as a gate dielectric for the novel T-gate transistors currently. Thin film analyses were conducted through advanced characterization techniques and also compared to the theoretical calculations for the modeling simulations. Atomic Force Microscope (AFM) was used to measure the surface roughness of the samples conditioned in the oxidizer environment before and after the CMP was conducted.  The affect of surface roughness on wettability of the surfaces studied through contact angle measurements on the treated tungsten films. Fourier Transform Infrared Spectroscopy with Attenuated Total Reflectance FTIR/ATR technique in combination with the X-Ray Reflectivity (XRR) was utilized to determine the thicknesses of the oxidized nano films on the tungsten wafers.  The results were evaluated through the comparison of the Pilling-Bedworth ratios of the oxidized nano films to determine the ability of the created oxide films as a self-protective oxide [1].  Furthermore, a new modeling approach was introduced to CMP process optimization by means of topographic evaluation of the metal oxide thin films.  Cahn Hilliard Equation (CHE) was utilized as an alternative to classical nucleation theory in terms of analyzing the topographic nature of the protective metal oxide nano films and modeling their growth, which was observed to affect the CMP performance. It was concluded that the material removal rate mechanisms and the consequent planarization performance depend on the nature of nucleation of the metal oxide films, which is tailored by the oxidizer concentration. The basic knowledge defined on the chemically modified thin films were also expanded to the germanium CMP applications. Particularly, formation and selective removal of chemically modified germanium/silica thin films in the presence of cationic and anionic surfactants were evaluated through AFM wear tests as well as CMP and surface wettability responses. It was determined that while the self-assembled surfactant structures help improve slurry stability, they may retard the material removal rates by inhibiting the particle surface interactions. The results of this study have shown that in the presence of hydrogen peroxide in the slurry, removal rates were mainly affected by the oxidizers surface activity resulting in the formation of germanium oxide film. However, surface quality and the selectivity of the Ge/SiO 2 systems were tuned through adjusting the concentration of the oxidizer and surfactant type/chain length in the system to optimize the planarization performance [2]. References Karagoz, A., Craciun, V., Basim, G.B., “Characterization of Nano-Scale Protective Oxide Films_ Application on Metal Chemical Mechanical Planarization”. ECS Journal of Solid State Science and Technology , 4 (2) P1- P8 (2015) Karagoz, A., and Basim, G.B. “Controlling Germanium CMP Selectivity through Slurry Mediation by Surface Active Agents”, ECS Journal of Solid State Science and Technology , CMP Special Issue, 4 (11) P5097-P5104 (2015).
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2016-01/22/1157
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2016
    detail.hit.zdb_id: 2438749-6
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  • 4
    Online Resource
    Online Resource
    CMP Development for New Generation Materials through Metal Oxide Thin Film Characterization
    The Electrochemical Society ; 2016
    In:  ECS Meeting Abstracts Vol. MA2016-02, No. 27 ( 2016-09-01), p. 1826-1826
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2016-02, No. 27 ( 2016-09-01), p. 1826-1826
    Abstract: Chemical Mechanical Planarization (CMP) process is currently facing the challenge to planarize larger scale wafers at an atomic scale precision. While the horizontal dimension (x-axis and y-axis as the wafer diameter) in the process can extend up to 300, 450 mm, the z-axis is limited to a margin of a couple hundred nanometers.  This requirement highlights the need for fundamental understanding on the surface chemistry of the layers being exposed to the planarization process in terms of their interactions with the CMP slurry chemistry.  Once the behavior of the wafer surface is understood at an atomic level, the process control metrics can be tuned accordingly. In our earlier work, we studied the growth of nano-scale protective oxide thin films for metal CMP on tungsten as a model [1].  Tungsten is a well-studied metallic layer in microelectronics and it is used as a gate dielectric for the novel T-gate transistors currently. Thin film analyses were conducted through advanced characterization techniques and also compared to the theoretical calculations for the modeling simulations. Atomic Force Microscope (AFM) was used to measure the surface roughness of the samples conditioned in the oxidizer environment before and after the CMP was conducted.  The affect of surface roughness on wettability of the surfaces studied through contact angle measurements on the treated tungsten films. Fourier Transform Infrared Spectroscopy with Attenuated Total Reflectance FTIR/ATR technique in combination with the X-Ray Reflectivity (XRR) was utilized to determine the thicknesses of the oxidized nano films on the tungsten wafers.  The results were evaluated through the comparison of the Pilling-Bedworth ratios of the oxidized nano films to determine the ability of the created oxide films as a self-protective oxide.  Furthermore, a new modeling approach was introduced to CMP process optimization by means of topographic evaluation of the metal oxide thin films.  Cahn Hilliard Equation (CHE) was utilized as an alternative to classical nucleation theory in terms of analyzing the topographic nature of the protective metal oxide nano films and modeling their growth, which was observed to affect the CMP performance [2] . It was concluded that the material removal rate mechanisms and the consequent planarization performance depend on the nature of nucleation of the metal oxide films, which is tailored by the oxidizer concentration. The basic knowledge defined on the chemically modified thin films has also been extended to the germanium CMP applications. Particularly, formation and selective removal of chemically modified germanium/silica thin films in the presence of cationic and anionic surfactants were evaluated through AFM wear tests as well as CMP and surface wettability responses. It was determined that while the self-assembled surfactant structures help improve slurry stability, they may retard the material removal rates by inhibiting the particle surface interactions [3]. The results of this study have shown that in the presence of hydrogen peroxide in the slurry, removal rates were mainly affected by the oxidizers surface activity resulting in the formation of germanium oxide film. However, surface quality and the selectivity of the Ge/SiO 2 systems were tuned through adjusting the concentration of the oxidizer and surfactant type/chain length in the system to optimize the planarization performance [3]. This paper reviews the affects of chemically modified thin films on the CMP performance at an atomic level for tungsten, silica and germanium CMP applications as metal, dielectric and semiconductor materials utilized in the microelectronics industry. References   A. Karagoz, V. Craciun, G.B. Basim, ECS Journal of Solid State Science and Technology , 4 (2), 1 (2015). A. Karagoz, Y. Sengul, G.B. Basim, ECS Transactions , 61 (17), 15 (2014). A. Karagoz, G.B. Basim, ECS Journal of Solid State Science and Technology , CMP Special Issue, 4 (11), 5097 (2015).
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2016-02/27/1826
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2016
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  • 5
    Online Resource
    Online Resource
    Improvement of Post CMP Cleaning Efficiency through Surface Energy Optimization and Use of Viscoelastic Fluids
    The Electrochemical Society ; 2019
    In:  ECS Meeting Abstracts Vol. MA2019-01, No. 17 ( 2019-05-01), p. 1039-1039
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2019-01, No. 17 ( 2019-05-01), p. 1039-1039
    Abstract: The chemical and mechanical actions of the CMP process to achieve planarization and material removal also affect the defectivity and post cleaning requirements spontaneously. The wafer surface is cleaned from the excessive chemicals and the slurry particles from the post CMP operations through utilization of the fundamentals of colloids and surface chemistry. The problem of attachment of the slurry particles on the wafer surface is becoming a more severe yield issue, as the microelectronic device dimensions keep decreasing continuously. Furthermore, in integrated circuit fabrication, over 50% of the yield losses occur because of the insufficient cleaning of the wafers [1]. To address the challenges of the post CMP cleaning, this study focuses on the correlation of the surface energy of the wafer post CMP to the particle count remaining on the wafer surface for the oxide surfaces as a model approach. To study the effects of surface nature of the substrate, measurements of surface roughness, contact angle, surface energy, and surface charge of the glass slides were measured and compared to the particle count on the wafers post CMP cleaning treatment. To study the particle retention on the surface, particle removal experiments were conducted in a rinsing flow cell and a siphoning flow cell by implementing impinging jet (rinsing) flow and siphoning flow, respectively. Consequently, better post CMP cleaning formulations were suggested for the oxide-based CMP applications with optimal surface energy conditions fulfilled. The surface free energy and the work of adhesion values were observed to correlate with the surface roughness of the substrates such that, as the surface roughness values increased, the surface free energy and work of adhesion values also increased. As the surface free energy increases, it becomes more difficult to remove particles from the surface without damaging the surface quality. Therefore, water becomes insufficient for removal of particles that remained on the surface. Therefore, a new method of post CMP cleaning is proposed that utilizes viscoelastic fluids to increase the removal of surface particles by taking advantage of the additional elastic stresses that are induced on the particles [2]. After coating the substrate surface with slurry particles, polymeric solutions with 0.7 wt% PAM and with 0.5 wt% PEO were used as the viscoelastic fluid. The optimum amount of polymeric solution was determined to be 40. The CMP-treated glass slides were fully coated and tested for the percent removal of particles. After conducting the siphoning flow experiment, multiple images were taken at 30 FPS (frames per second), and these images were analyzed to conduct particle removal analyses. The use of viscoelastic fluids was observed to increase the removal of particles due to the drag force from the elastic stresses that were applied on the particles by the viscoelastic fluids. References: Zhang, A.A. Busnaina, M.A. Fury, S.Q. Wang. The removal of deformed submicron particles from silicon wafers by spin rinse and megasonics. Journal of Electronic Materials, 29:199–204, 2000. W. Walker, T.T. Hsu, S. Fitzgibbon, D.S.L. Mui, J. Zhu, A. Mendiratta, C.W. Frank, G.G. Fuller. Enhanced particle removal using viscoelatic fluids. Journal of Rheology, 58(1): 63–68, 2013.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2019-01/17/1039
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2019
    detail.hit.zdb_id: 2438749-6
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