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  • Artikel  (1.410)
  • 2010-2014  (1.410)
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  • Artikel  (1.410)
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  • 11
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    Growth of antiferromagnetically ordered Cr monolayer on Ag(100) (2014)
    Elsevier
    In: Vacuum
    Details
    Publikationsdatum: 2014-12-13
    Beschreibung: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Jayanta Das , Asish K. Kundu , Krishnakumar S.R. Menon Two-dimensional antiferromagnetism observed on flat Cr monolayers deposited on Ag(100) has been investigated under various growth conditions. Cr monolayer domains are found to grow within the temperature range of 373–453 K while multilayer growth mode is prevalent at room temperature (RT). In agreement with theoretical predictions, a c (2 × 2) antiferromagnetic configuration is observed on Cr monolayer and is confirmed by the presence of magnetic superstructural spots in Low Energy Electron Diffraction (LEED) and antiferromagnetic Cr 3 d bands in Angle-resolved Photoemission Spectroscopy (ARPES) studies. Antiferromagnetism of Cr monolayer film is found to depend strongly on various growth parameters such as growth temperature, annealing temperature, annealing duration, rate of growth etc. and are studied in detail here. The phenomenon of Cr–Ag intermixing at the interface is found to be the main factor for the complex growth of Cr on Ag(100) substrate. Optimum parameters for the growth of large monolayer Cr domains on Ag(100) substrate are presented here.
    Print ISSN: 0042-207X
    Digitale ISSN: 1879-2715
    Thema: Maschinenbau , Physik
    Publiziert von Elsevier
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  • 12
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    Raman and thermal desorption spectroscopy analyses of amorphous graphite-like carbon films with incorporated xenon (2014)
    Elsevier
    In: Vacuum
    Details
    Publikationsdatum: 2014-12-13
    Beschreibung: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): G.A. Viana , F.C. Marques Structural and thermodynamic properties of xenon incorporated in amorphous carbon films deposited by means of a sputtering system free of vacuum pumping during the deposition were investigated by visible Raman (Vis–Raman) scattering and thermal desorption spectroscopy (TDS), respectively. Vis–Raman measurements, carried out before and after the xenon desorption, revealed a polycrystalline material rich in C-sp 2 sites that form randomly dispersed nanosized graphite clusters (nanocrystals) of approximately 1 nm. After xenon desorption, a compensating mechanism, activated by the thermal heating, promotes a more ordered C-sp 2 network as revealed by the linewidths of both D and G bands, as well as by the I D / I G ratio evolution. The TDS thermograms show that the xenon onset effusing temperature is approximately 120 °C. Besides, they also revealed two different regimes, at low and at high temperatures, associated with desorption of xenon atoms trapped either in an interconnecting void network or within the graphite nanocrystals. From the latter regime, the xenon diffusion free energy (activation energy) was determined to be 1.2 eV (115.7 kJ/mol) on the basis of the diffusion-limited desorption standard model.
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    Digitale ISSN: 1879-2715
    Thema: Maschinenbau , Physik
    Publiziert von Elsevier
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  • 13
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    Fast crystallization of Mg-doped Sb4Te for phase change memory (2014)
    Elsevier
    In: Vacuum
    Details
    Publikationsdatum: 2014-12-13
    Beschreibung: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Xiang Shen , Junjian Li , Guoxiang Wang , Zhanshan Wang , Yegang Lu , Shixun Dai We prepared Mg-doped Sb 4 Te films and investigated their structural, electrical and optical properties. It was found that Mg could increase the crystallization temperature and improve the activation energy of crystallization as well as amorphous state stability of the Sb 4 Te film. Compared with Ge 2 Sb 2 Te 5 , the optimal composition of Mg 19.8 (Sb 4 Te) 80.2 exhibits a higher crystallization temperature (∼187 °C), and better data retention ability (keeping the amorphous state at 113.6 °C for ten years). Moreover, fast full crystallization (∼20 ns at a laser power of ∼60 mW) in the Mg 19.8 (Sb 4 Te) 80.2 film is confirmed, which is essential to achieve rapid data recording in phase change memory.
    Print ISSN: 0042-207X
    Digitale ISSN: 1879-2715
    Thema: Maschinenbau , Physik
    Publiziert von Elsevier
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  • 14
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    Three-step vacuum separation for treating arsenic sulphide residue (2014)
    Elsevier
    In: Vacuum
    Details
    Publikationsdatum: 2014-12-13
    Beschreibung: Publication date: January 2015 Source: Vacuum, Volume 111 Author(s): Haijin Hu , Keqiang Qiu Up to now, most of arsenic sulphide residue can't be properly disposed. The traditional processes for treating arsenic sulphide residue have some widespread drawbacks such as the complex process, the high cost in operation, and the less than satisfactory removal effect and environmental protection. In view of this, a process of three-step vacuum separation was proposed for treating arsenic sulphide residue in this work. During vacuum separation, elemental sulphide and arsenic trioxide could be recovered effectively in primary distillation at temperature of 180 °C, distillation time of 2.0 h, corresponding to the residual gas pressure of 15 Pa. In secondary distillation, arsenic sulfide was obtained under the condition of 450 °C for 30 min, with a residual gas pressure of 15 Pa. When the temperature increased to 1000 °C for 2 h, lead sulfide was evaporated out in third distillation. Through the three-step vacuum separation, calcium fluoride was left behind in the third distilland, in which the content of arsenic was 5.65 × 10 −4  wt.%. Correspondingly, the removal rate of arsenic was almost 100%. The vacuum process is expected to be effectively employed for recycling valuable components from arsenic sulphide residue, and meanwhile eliminating its pollution.
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    Digitale ISSN: 1879-2715
    Thema: Maschinenbau , Physik
    Publiziert von Elsevier
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  • 15
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    Investigation on dispersive optical constants and microstructural parameters of the absorber CuSbS2 thin films (2014)
    Elsevier
    In: Vacuum
    Details
    Publikationsdatum: 2014-12-13
    Beschreibung: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): A. Rabhi , Y. Fadhli , M. Kanzari In this work, the thermal annealing effects on the microstructural, optical constants and electrical properties of as-grown vacuum evaporated CuSbS 2 thin films have been investigated. The annealing temperatures in vacuum were varied in the range 100–220 °C. CuSbS 2 thin films were deposited on heated glass substrates. These films were characterized for their structural, optical and electrical properties using X-ray diffraction (XRD), optical measurement and hot probe method. The lattice parameters, crystal strain ɛ and dislocation density δ are calculated. The optical constants of the elaborated films were determined, in the spectral range 300–1800 nm. The values of the optical band gap energy ranged between 1.39 and 1.75 eV. The dispersion of the refractive index and extinction coefficient in the infrared region are adequately explained using a single oscillator model. The different values of the dispersion energy E d , the oscillator energy E 0 , the high frequency dielectric constant ε ∞ and the ratio of the carrier concentration to the effective mass were estimated according to the models of Spitzer-Fan and Wemple _ DiDomenico. The electrical conductivity measurements suggest that obtained films show ‘mineral materials’ behavior with conductivity of 10 −4  Ω −1  cm −1 . The annealed layers exhibit an obvious p _ type semiconductor.
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    Digitale ISSN: 1879-2715
    Thema: Maschinenbau , Physik
    Publiziert von Elsevier
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  • 16
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    TiN films deposition inside stainless-steel tubes using magnetic field-enhanced arc ion plating (2014)
    Elsevier
    In: Vacuum
    Details
    Publikationsdatum: 2014-12-13
    Beschreibung: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): Yanhui Zhao , Chaoqian Guo , Wenjin Yang , Yuqiu Chen , Baohai Yu A magnetic field-enhanced arc ion plating (MFE-AIP) is utilized to deposit TiN films on the inner wall of a stainless-steel tube with inner diameter 36 mm and length from 108 to 288 mm. Three groups of magnetic field coils are designed and located at different positions, to produce axial magnetic field to focus and to guide the arc plasma beam to spread along the center axial direction of the tubular workpiece. Samples of AISI 304 stainless steel are horizontally placed inside the tube to investigate the structure and performance of the films. A pulse bias is applied to the substrate to accelerate the plasma. The structure, surface morphology, cross-sectional image, hardness and wear-resistant properties as a function of the position inside the tubes are investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), nanoindenter, friction-tester, respectively. The results show that the film structures change from a single TiN phase into mixed phases of TiN and Ti 2 N with the increase in the distance to the tube entrance. The thickness, hardness and sliding friction coefficient of the films decrease with the increase in the distance to the tube entrance. The magnetic field-enhanced arc ion plating is shown to be an effective tool to treat the inner surface of stainless-steel tubes.
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    Digitale ISSN: 1879-2715
    Thema: Maschinenbau , Physik
    Publiziert von Elsevier
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  • 17
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    Investigation on white light emissions from CeO2/Dy2O3 multilayer films based on silicon substrates (2014)
    Elsevier
    In: Vacuum
    Details
    Publikationsdatum: 2014-12-13
    Beschreibung: Publication date: February 2015 Source: Vacuum, Volume 112 Author(s): L. Li , S.W. Wang , G.Y. Mu , X. Yin , G.M. Wan , X.W. Zhang , W.B. Duan , L.X. Yi CeO 2 /Dy 2 O 3 multilayer films were deposited on Si substrates using electron-beam evaporation, and Dy 3+ ions were doped in CeO 2 after samples were annealed in weak reducing atmosphere at high temperature. White light emissions were observed from CeO 2 :Dy 3+ films. The luminescence properties of CeO 2 :Dy 3+ films were investigated by excitation, emission spectra and decay curves. In addition, the effects of Dy 3+ concentration and annealing temperature on photoluminescence intensity were conducted. In this paper, the color coordinates of samples with different Dy 3+ concentration were calculated and the results were presented in chromaticity diagram.
    Print ISSN: 0042-207X
    Digitale ISSN: 1879-2715
    Thema: Maschinenbau , Physik
    Publiziert von Elsevier
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  • 18
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    Characterization and Analysis of Infrared Imaging Diagnostics for Intense Pulsed Ion and Electron Beams (2014)
    Elsevier
    In: Vacuum
    Details
    Publikationsdatum: 2014-12-13
    Beschreibung: Publication date: Available online 10 December 2014 Source: Vacuum Author(s): Xiao Yu , Jie Shen , Miao Qu , Wenbin Liu , Haowen Zhong , Jie Zhang , Yanyan Zhang , Sha Yan , Gaolong Zhang , Xiaofu Zhang , Xiaoyun Le A two-dimensional calorimetric diagnostic technique with infrared imaging method has been developed. The technique, which enables the measuring of two-dimensional energy density distribution of intense pulsed ion beam (IPIB) and intense pulsed electron beam (IPEB) with particle energy typically of hundreds of keV, is applicable for the diagnostics of IPIB and IPEB for material treatment purpose such as fast quenching, surface melt coating, etc. Testing of the technique has been carried out with IPIB on pulsed ion beam accelerator BIPPAB-450. The maximum ion energy was 450 keV, the density of the ion current was 150A/cm 2 , and the pulse duration (at half height) was 80ns. The results showed that the technique can achieve surface energy density sensitivity of 0.1J/cm 2 and spatial resolution of 1mm. Also, the validity and precision of the method was checked by establishing a modeling based on Fourier’s Law with Finite Element Method (FEM). The applicability and principles of the technique for IPIB and IPEB was also discussed reasonably.
    Print ISSN: 0042-207X
    Digitale ISSN: 1879-2715
    Thema: Maschinenbau , Physik
    Publiziert von Elsevier
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  • 19
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    Ge/NiGe bilayer applied for the recording film of write-once blu-ray disc (2014)
    Elsevier
    In: Vacuum
    Details
    Publikationsdatum: 2014-12-13
    Beschreibung: Publication date: Available online 9 December 2014 Source: Vacuum Author(s): Sin-Liang Ou , Sheng-Chi Chen , Yan-Cheng Lin , Tsung-Yen Kuo , Chao-Kuang Wen In this study, the Ge/NiGe (3 nm/16 nm) bilayer was deposited by sputtering at room temperature to serve as the recording film for write-once blu-ray disc. The thermal properties, optical characteristics, crystallization mechanisms and recording performance were all investigated in detail. The composition of the NiGe alloy layer was maintained at Ni 50 Ge 50 . Based on the results of reflectivity-temperature measurements, it can be observed that the Ge/NiGe bilayer had two temperature ranges of reflectivity increment, i.e. 170-216 °C and 340-352 °C. Microstructural analysis revealed that the NiGe nano-crystalline phase was generated in the as-deposited state. After annealing at 250 °C, the crystallinity of the NiGe phase was improved. Upon further increasing the annealing temperature to 370 °C, the Ge crystallization appeared in this bilayer. Dynamic tests indicate that the blu-ray disc fabricated with the Ge/NiGe recording layer possesses optimum jitter values of 6.4% and 7.1% at 1× and 4× writing speeds, respectively. This implies that the Ge/NiGe bilayer has high potential for write-once blue laser recording applications.
    Print ISSN: 0042-207X
    Digitale ISSN: 1879-2715
    Thema: Maschinenbau , Physik
    Publiziert von Elsevier
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  • 20
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    Benefits of the controlled reactive high-power impulse magnetron sputtering of stoichiometric ZrO2 films (2014)
    Elsevier
    In: Vacuum
    Details
    Publikationsdatum: 2014-12-13
    Beschreibung: Publication date: Available online 10 December 2014 Source: Vacuum Author(s): J. Vlček , J. Rezek , J. Houška , T. Kozák , J. Kohout High-power impulse magnetron sputtering with a pulsed reactive gas (oxygen) flow control was used for high-rate reactive depositions of densified, highly optically transparent, stoichiometric ZrO 2 films onto floating substrates. The depositions were performed using a strongly unbalanced magnetron with a directly water-cooled planar Zr target of 100 mm diameter in argon-oxygen gas mixtures at the argon pressure of 2 Pa. The repetition frequency was 500 Hz at the deposition-averaged target power density from 5 Wcm -2 to 53 Wcm -2 . The voltage pulse durations ranged from 50 μs to 200 μs. The target-to-substrate distance was 100 mm. An optimized location of the oxygen gas inlets in front of the target and their orientation toward the substrate made it possible to improve the quality of the films due to minimized arcing at the sputtered target and to enhance their deposition rates up to 120 nm/min at the deposition-averaged target power density of 52 Wcm -2 , a voltage pulse duration of 200 μs and a substrate temperature less than 120 °C. The films exhibited a hardness of 16 GPa, a refractive index of 2.19 and an extinction coefficient of 2×10 -3 (both at the wavelength of 550 nm). Under these optimized conditions, we measured the highest (Zr + + Zr 2+ ) and (O 2 + + O + ) ion fractions in the total fluxes of positive ions, and a low population of high-energy O - ions at the substrate position.
    Print ISSN: 0042-207X
    Digitale ISSN: 1879-2715
    Thema: Maschinenbau , Physik
    Publiziert von Elsevier
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