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  • Articles  (238)
  • PAPER CURRENT  (238)
  • 2015-2019  (238)
  • 2017  (238)
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  • PAPER CURRENT  (238)
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  • 2015-2019  (238)
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  • 1
    Publication Date: 2017-12-28
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): Andrew J. Martin, Yong Wei, Andreas Scholze Dopant analysis in next-generation semiconductor devices has become increasingly difficult for traditionally used analytical techniques. Atom probe tomography has been viewed by some as a possible solution to these challenges because of its three-dimensional capabilities, forcing the atom probe to mature at a rapid pace in this particular field. This work presents a well-rounded analysis of how APT can be used to examine B dopant diffusion into the channel of a next-generation FinFET, where the channel dimensions and the number of dopants atoms are significantly smaller than any devices measured by APT to date. Complimentary EELS analysis of the gate and channel provides a better understanding of how distortions and artifacts in the APT reconstruction affect the overall integrity of the dataset. Dopant measurements in the channel are confirmed through in-depth mass spectrum analysis and compared with values proposed by TCAD modeling.
    Print ISSN: 0304-3991
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
    Published by Elsevier
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  • 2
    Publication Date: 2017-12-26
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): Yi Jiang, Elliot Padgett, Robert Hovden, David A. Muller Electron tomography (ET) has become a standard technique for 3D characterization of materials at the nano-scale. Traditional reconstruction algorithms such as weighted back projection suffer from disruptive artifacts with insufficient projections. Popularized by compressed sensing, sparsity-exploiting algorithms have been applied to experimental ET data and show promise for improving reconstruction quality or reducing the total beam dose applied to a specimen. Nevertheless, theoretical bounds for these methods have been less explored in the context of ET applications. Here, we perform numerical simulations to investigate performance of ℓ 1 -norm and total-variation (TV) minimization under various imaging conditions. From 36,100 different simulated structures, our results show specimens with more complex structures generally require more projections for exact reconstruction. However, once sufficient data is acquired, dividing the beam dose over more projections provides no improvements—analogous to the traditional dose-fraction theorem. Moreover, a limited tilt range of ±75° or less can result in distorting artifacts in sparsity-exploiting reconstructions. The influence of optimization parameters on reconstructions is also discussed.
    Print ISSN: 0304-3991
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
    Published by Elsevier
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  • 3
    Publication Date: 2017-12-23
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): F. Timischl, N. Inoue A method for increasing compositional or material contrast of a standard semiconductor BSE detector in a scanning electron microscope (SEM) by compensation of the topographic contrast component is proposed. Compensation is based on the physical properties of backscattered electron emission and topography information of the specimen's surface. Three analytical and semi-empirical compensation algorithms employing different physical models and approximations are implemented and compared to conventional BSE signals to show the effectivity of the proposed compensation approach.
    Print ISSN: 0304-3991
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 4
    Publication Date: 2017-12-22
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): Alan J. Craven, Bianca Sala, Joanna Bobynko, Ian MacLaren Nanometre-sized Ti x V (1− x ) C y N z precipitates in an Fe20%Mn steel matrix with a thickness range from 14 to 40 nm are analysed using DualEELS. Their thicknesses, volumes and compositions are quantified using experimental binary standards and the process used to give robust results is described. Precisions of a few percent are achieved with accuracies that are estimated to be of a similar magnitude. Sensitivities are shown to be at 0.5–1 unit cells range in the thinnest matrix region, based on the assumption that a sub-lattice is fully populated by the element. It rises to the 1–2 unit cell range for the metals and 2–3 unit cells for the non-metal in the thickest matrix region. The sensitivities for Ti and N are greater than those for V and C respectively because the O K-edge from surface oxide needs to be separated from the V L 2,3 -edge, and the C K-edges from C in the matrix and amorphous C on the surface have to be separated from the C in the precipitate itself. Separation of the contributions from the bulk and the surface is demonstrated, showing that there is significant and detectable C in the matrix but no O, while there is significant O but little C in the surface oxide. Whilst applied to precipitates in steel in this work, the approach can be adapted to many multi-phase systems.
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    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 5
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    Elsevier
    Publication Date: 2017-12-21
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): Earl J. Kirkland Aberration correctors offer greatly enhanced resolution in electron microscopes, however can require dramatically more complicated adjustments. A method of computer adjustment of a probe forming aberration corrector in a Scanning Transmission Electron Microscope (STEM) is proposed and analyzed using image simulation. This method works directly with the image and should work well with crystalline specimens. It does not have a significant dependence on post specimen lens aberrations.
    Print ISSN: 0304-3991
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 6
    Publication Date: 2017-12-20
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): Patrick G. Callahan, Jean-Charles Stinville, Eric R. Yao, McLean P. Echlin, Michael S. Titus, Marc De Graef, Daniel S. Gianola, Tresa M. Pollock The new capabilities of a FEG scanning electron microscope (SEM) equipped with a scanning transmission electron microscopy (STEM) detector for defect characterization have been studied in parallel with transmission electron microscopy (TEM) imaging. Stacking faults and dislocations have been characterized in strontium titanate, a polycrystalline nickel-base superalloy and a single crystal cobalt-base material. Imaging modes that are similar to conventional TEM (CTEM) bright field (BF) and dark field (DF) and STEM are explored, and some of the differences due to the different accelerating voltages highlighted. Defect images have been simulated for the transmission scanning electron microscopy (TSEM) configuration using a scattering matrix formulation, and diffraction contrast in the SEM is discussed in comparison to TEM. Interference effects associated with conventional TEM, such as thickness fringes and bending contours are significantly reduced in TSEM by using a convergent probe, similar to a STEM imaging modality, enabling individual defects to be imaged clearly even in high dislocation density regions. Beyond this, TSEM provides significant advantages for high throughput and dynamic in-situ characterization.
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    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 7
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    Elsevier
    Publication Date: 2017-12-17
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): Xi Cen, Klaus van Benthem The gallium ion beam heating on electron transparent transmission electron microscopy (TEM) samples of Au/Ni bilayer films supported by SiO 2 substrates was studied by in-situ TEM combined with energy dispersive X-ray spectroscopy. Brief Ga + ion beam irradiation during sample transfer inside the focused ion beam instrument was found to induce dewetting of bilayer films. The observed morphological changes of the metal films are complemented by considerable Au diffusion through the underlying polycrystalline Ni film and adsorption at the Ni/substrate interface. In-situ heating experiments confirm that alterations of the metal bilayer films caused by ion beam irradiation are consistent with thermal annealing at 400 °C for several minutes in the absence of any ion bombardment. Ion beam damage effects equivalent to prolonged heating may pose considerable limitations to ion beam microscopy of samples with reduced dimensions. Ex-situ lift-out procedures of electron transparent samples in the absence of any ion beam irradiation lead to successful conservation of sample morphologies.
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    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 8
    Publication Date: 2017-12-17
    Description: Publication date: March 2018 Source: Ultramicroscopy, Volume 186 Author(s): T. Vermeij, E. Plancher, C.C. Tasan Focused ion beam (FIB) milling has enabled the development of key microstructure characterization techniques ( e.g. 3D electron backscatter diffraction (EBSD), 3D scanning electron microscopy imaging, site-specific sample preparation for transmission electron microscopy, site-specific atom probe tomography), and micro-mechanical testing techniques ( e.g. micro-pillar compression, micro-beam bending, in-situ TEM nanoindentation). Yet, in most milling conditions, some degree of FIB damage is introduced via material redeposition, Ga + ion implantation or another mechanism. The level of damage and its influence vary strongly with milling conditions and materials characteristics, and cannot always be minimized. Here, a masking technique is introduced, that employs standard FIB-SEM equipment to protect specific surfaces from redeposition and ion implantation. To investigate the efficiency of this technique, high angular resolution EBSD (HR-EBSD) has been used to monitor the quality of the top surface of several micro-pillars, as they were created by milling a ringcore hole in a stress-free silicon wafer, with or without protection due to an “umbrella”. HR-EBSD provides a high-sensitivity estimation of the amount of FIB damage on the surface. Without the umbrella, EBSD patterns are severely influenced, especially within 5 µm of the milled region. With an optimized umbrella, sharp diffraction patterns are obtained near the hole, as revealed by average cross correlation factors greater than 0.9 and equivalent phantom strains of the order 2 × 10 −4 . Thus, the umbrella method is an efficient and versatile tool to support a variety of FIB based techniques.
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    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 9
    Publication Date: 2017-12-17
    Description: Publication date: February 2018 Source: Ultramicroscopy, Volume 185 Author(s): Pau Torruella, Marta Estrader, Alberto López-Ortega, Maria Dolors Baró, Maria Varela, Francesca Peiró, Sònia Estradé In this work, the use of cluster analysis algorithms, widely applied in the field of big data, is proposed to explore and analyze electron energy loss spectroscopy (EELS) data sets. Three different data clustering approaches have been tested both with simulated and experimental data from Fe 3 O 4 /Mn 3 O 4 core/shell nanoparticles. The first method consists on applying data clustering directly to the acquired spectra. A second approach is to analyze spectral variance with principal component analysis (PCA) within a given data cluster. Lastly, data clustering on PCA score maps is discussed. The advantages and requirements of each approach are studied. Results demonstrate how clustering is able to recover compositional and oxidation state information from EELS data with minimal user input, giving great prospects for its usage in EEL spectroscopy.
    Print ISSN: 0304-3991
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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  • 10
    Publication Date: 2017-12-17
    Description: Publication date: February 2018 Source: Ultramicroscopy, Volume 185 Author(s): Arseny Kalinin, Valentin Atepalikhin, Oleg Pakhomov, Andrei L. Kholkin, Alexander Tselev Nondestructive scanning probe microscopy of fragile nanoscale objects is currently in increasing need. In this paper, we report a novel atomic force microscopy mode, HybriD Piezoresponse Force Microscopy (HD-PFM), for simultaneous nondestructive analysis of piezoresponse as well as of mechanical and dielectric properties of nanoscale objects. We demonstrate this mode in application to self-assembled diphenylalanine peptide micro- and nanotubes formed on a gold-covered substrate. Nondestructive in- and out-of-plane piezoresponse measurements of tubes of less than 100 nm in diameter are demonstrated for the first time. High-resolution maps of tube elastic properties were obtained simultaneously with HD-PFM. Analysis of the measurement data combined with the finite-elements simulations allowed quantification of tube Young's modulus. The obtained value of 29 ± 1 GPa agrees well with the data obtained with other methods and reported in the literature.
    Print ISSN: 0304-3991
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
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