Elucidating the interaction between magnetic moments and itinerant carriers is an important step to spintronic applications. Here, we investigate magnetic and transport properties in $d^0$ ferromagnetic SiC single crystals prepared by postimplantation pulsed laser annealing. Magnetic moments are contributed by the $p$ states of carbon atoms, but their magnetic circular dichroism is different from that in semi-insulating SiC samples. The anomalous Hall effect and negative magnetoresistance indicate the influence of $d^0$ spin order on free carriers. The ferromagnetism is relatively weak in N-implanted SiC compared with that in Al-implanted SiC after annealing. The results suggest that $d^0$ magnetic moments and itinerant carriers can interact with each other, which will facilitate the development of SiC spintronic devices with $d^0$ ferromagnetism.

• Received 21 February 2017

DOI:https://doi.org/10.1103/PhysRevB.95.195309