Magnetocrystalline anisotropic effect in GdCo1xFexAsO(x=0,0.05)

T. Shang, Y. H. Chen, F. Ronning, N. Cornell, J. D. Thompson, A. Zakhidov, M. B. Salamon, and H. Q. Yuan
Phys. Rev. B 91, 125106 – Published 2 March 2015

Abstract

From a systematic study of the electrical resistivity ρ(T,H), magnetic susceptibility χ(T,H), isothermal magnetization M(H), and the specific heat C(T,H), a temperature-magnetic field (TH) phase diagram has been established for GdCo1xFexAsO (x=0 and 0.05) polycrystalline compounds. GdCoAsO undergoes two long-range magnetic transitions: ferromagnetic (FM) transition of Co 3d electrons (TCCo) and antiferromagnetic (AFM) transition of Gd 4f electrons (TNGd). For the Fe-doped sample (x=0.05), an extra magnetic reorientation transition takes place below TNGd, which is likely associated with Co moments. The two magnetic species of Gd and Co are coupled antiferromagnetically to give rise to ferrimagnetic (FIM) behavior in the magnetic susceptibility. Upon decreasing the temperature (T<TCCo), the magnetocrystalline anisotropy breaks up the FM order of Co by aligning the moments with the local easy axes of the various grains, leading to a spin reorientation transition at TRCo. By applying a magnetic field, TRCo monotonically decreases to lower temperatures, while the TNGd is relatively robust against the external field. On the other hand, the applied magnetic field pulls the magnetization of grains from the local easy direction to the field direction via a first-order reorientation transition, with the transition field (HM) increasing upon cooling the temperature.

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  • Received 4 January 2015
  • Revised 14 February 2015

DOI:https://doi.org/10.1103/PhysRevB.91.125106

©2015 American Physical Society

Authors & Affiliations

T. Shang1,*, Y. H. Chen1, F. Ronning2, N. Cornell3, J. D. Thompson2, A. Zakhidov3, M. B. Salamon3, and H. Q. Yuan1,4,†

  • 1Center for Correlated Matter and Department of Physics, Zhejiang University, Hangzhou 310058, China
  • 2Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
  • 3UTD-NanoTech Institute, The University of Texas at Dallas, Richardson, Texas 75083–0688, USA
  • 4Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China

  • *Present address: Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
  • hqyuan@zju.edu.cn

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Vol. 91, Iss. 12 — 15 March 2015

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