Abstract
High quality single-crystal Au(100) buffers have been grown on GaAs(100) or MgO(100) substrates via a thin bcc Fe(100) nucleation layer. Using RHEED, LEED and Auger spectroscopy the growth of Ni overlayers at room temperature was observed to follow an epitaxial layer-by-layer mode for 2 monolayers, after which islanding occured. Detailed analysis of the Auger signal reveals that atomic mixing appears within the first completed layer. Grazing incidence diffraction has been used to investigate the structure of 5-10 nm films. A mixture of (100) and (110) grains have been characterized; the latter orientation shows a large number of stacking faults along the [111] direction in agreement with the Au[001] direction.
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Acknowledgement
We wish to thank B. Pras for technical support, M. Brunel for his contribution to GID measurements, M. Dubus for RBS calibrations.
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Gilles, B., Eymery, J., Marty, A. et al. The Growth of Ni Overlayers on Au(100) Buffers Deposited on GaAs(100) and MgO(100) Substrates.. MRS Online Proceedings Library 237, 511–516 (1991). https://doi.org/10.1557/PROC-237-511
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DOI: https://doi.org/10.1557/PROC-237-511