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Chihiro Kaito Chihiro Kaito1, Seiji Kimura Seiji Kimura1, Yuuki Ojima Yuuki Ojima1, Yasuyuki Hatayama Yasuyuki Hatayama1, Daisuke Ban Daisuke Ban1, Toshitaka Nakada Toshitaka Nakada1, Yoshio Saito Yoshio Saito2 and Chiyoe Koike Chiyoe Koike3
Copyright (c) 1999 The Japan Society of Applied Physics
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Citation Chihiro Kaito Chihiro Kaito et al 1999 Jpn. J. Appl. Phys. 38 213
DOI 10.1143/JJAP.38.213
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In the case of a reaction between carbon particles and SiO films, silicon carbide was produced by heating above 900°C by the diffusion of Si atoms from Si crystals in SiO films into carbon particles. In the case of that between Si particles and carbon films, silicon carbide was produced above room temperature by the diffusion of carbon atoms into Si particles. In the above two cases, the direction of atom diffusion during the reaction was different.
