Hydride Vapor Phase Epitaxy of InxGa1-xN Thin Films

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Copyright (c) 1997 The Japan Society of Applied Physics
, , Citation Yuichi Sato Yuichi Sato and Susumu Sato Susumu Sato 1997 Jpn. J. Appl. Phys. 36 4295 DOI 10.1143/JJAP.36.4295

1347-4065/36/7R/4295

Abstract

In this paper, we investigate the growth of InxGa1-xN thin films using the hydride vapor phase epitaxy (HVPE) method. Indium is hardly contained in films grown at higher growth temperatures, and phase separation tendencies between InN and GaN are observed in some grown films. In their photoluminescence spectra measured at room temperature, two peaks are observed at 370 nm and 430–440 nm.

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10.1143/JJAP.36.4295