Brought to you by:

Low-Noise and Low-Operation Current AlGaAs Separated-Double-Heterostructure Lasers

, , and

Copyright (c) 1996 The Japan Society of Applied Physics
, , Citation Hironobu Narui et al 1996 Jpn. J. Appl. Phys. 35 2653 DOI 10.1143/JJAP.35.2653

1347-4065/35/5R/2653

Abstract

Low operation current of 11 mA at 3 mW was obtained using a Separated-Double-Heterostructure (SDH) laser, whose a buried heterostructure can be fabricated using single-step metalorganic chemical vapor deposition (MOCVD). The relative intensity noise (RIN) for an optical feedback ratio less than 2.0% was below -120 dB/Hz at 700 KHz, with low reflectivity facet coating. Dependence of the RIN on the thickness of the active layer was obtained. It was found that dependence was influenced by variations in the spontaneous emission factor of the laser.

Export citation and abstract BibTeX RIS

Please wait… references are loading.
10.1143/JJAP.35.2653