Gas-Sensitive Schottky Gated Field Effect Transistors Utilizing Poly(3-alkylthiophene) Films

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Copyright (c) 1991 The Japan Society of Applied Physics
, , Citation Yutaka Ohmori et al 1991 Jpn. J. Appl. Phys. 30 L1247 DOI 10.1143/JJAP.30.L1247

This article is corrected by 1991 Jpn. J. Appl. Phys. 30 L1778

1347-4065/30/7B/L1247

Abstract

The gas sensitivity of Schottky gated poly(3-alkylthiophene) field effect transistors has been reported. The source-drain currents have been strongly influenced by air, water and chloroform gases. A large increase in transconductance of the (field effect transistor) FET is observed in chloroform gas. This is explained by the increase of the mobility with diffusion of chloroform molecules into the poly(3-alkylthiophene) films.

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10.1143/JJAP.30.L1247