Abstract
The transition energies, absorption oscillator strengths, line strengths and transition probabilities between computed levels are reported for the He-like to Ne-like Silicon ion sequences. Wavefunctions were determined relativistic configuration interaction (RCI) and multi-configuration Dirac-Fock (MCDF) technique included the Breit interaction, quantum electrodynamic (QED) corrections and nuclear mass corrections. The calculated values are in good agreement with the available experimental data and the recent theoretical values obtained from other methods. These data provide reference values for the level lifetimes, charge state distributions, and average charge of silicon plasmas.
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Wang, X., Jiang, G., Hao, L.H. et al. Systematic multi-configuration Dirac-Fock calculations of the Kα and Kβ X-ray spectra of silicon ions. Eur. Phys. J. D 65, 505–508 (2011). https://doi.org/10.1140/epjd/e2011-10577-6
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DOI: https://doi.org/10.1140/epjd/e2011-10577-6