Low-temperature MoO3 film from a facile synthetic route for an efficient anode interfacial layer in organic optoelectronic devices

Jun Liu; Xinkai Wu; Sujie Chen; Xingdong Shi; Jing Wang; Saijun Huang; Xiaojun Guo; Gufeng He

doi:10.1039/C3TC31580K

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Low-temperature MoO₃ film from a facile synthetic route for an efficient anode interfacial layer in organic optoelectronic devices†

Jun Liu,^a Xinkai Wu,^a Sujie Chen,^a Xingdong Shi,^a Jing Wang,^a Saijun Huang,^a Xiaojun Guo^a and Gufeng He*^a

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* Corresponding authors

^a National Engineering Lab for TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
E-mail: gufenghe@sjtu.edu.cn
Fax: +86 21 34204371
Tel: +86 21 34207045

Abstract

A low temperature solution-processed MoO₃ (sMoO₃) thin film with a facile method for organic optoelectronic devices is developed. The film is extremely smooth with a root mean square (RMS) roughness of 0.318 nm, which is a significant advance for fabricating devices. An X-ray photoelectron spectroscopy (XPS) measurement shows that the sMoO₃ possesses few Mo⁵⁺ states with a Mo : O stoichiometry of 2.99, demonstrating a nearly ideal MoO₃ stoichiometry at a low annealing temperature. The sMoO₃ film exhibits a superior hole injection ability in both an organic light-emitting diode (OLED) and organic photovoltaic cell (OPV), compared to conventional hole injection material poly (3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). It is proved that the sMoO₃ fabricated by the simple and low-cost method is an excellent alternative to a PEDOT:PSS anode buffer layer for solution-processed organic optoelectronic devices.

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Article information

DOI: https://doi.org/10.1039/C3TC31580K
Article type: Paper
Submitted: 12 Aug 2013
Accepted: 14 Oct 2013
First published: 16 Oct 2013

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J. Mater. Chem. C, 2014,2, 158-163

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Low-temperature MoO₃ film from a facile synthetic route for an efficient anode interfacial layer in organic optoelectronic devices

J. Liu, X. Wu, S. Chen, X. Shi, J. Wang, S. Huang, X. Guo and G. He, J. Mater. Chem. C, 2014, 2, 158 DOI: 10.1039/C3TC31580K

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Journal of Materials Chemistry C