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Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy

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Abstract

InGaN nanowires (NWs) are grown on pyramid textured Si substrates by stationary plasma-assisted molecular beam epitaxy (PA-MBE). The incidence angles of the highly directional source beams vary for different pyramid facets, inducing a distinct inter-facet modulation of the In content of the InGaN NWs, which is verified by spatial element distribution analysis. The resulting multi-wavelength emission is confirmed by photoluminescence (PL) and cathodoluminescence (CL). Pure GaN phase formation dominates on certain facets, which is attributed to extreme local growth conditions, such as low active N flux. On the same facets, InGaN NWs exhibit a morphology change close to the pyramid ridge, indicating inter-facet atom migration. This cross-talk effect due to inter-facet atom migration is verified by a decrease of the inter-facet In content modulation amplitude with shrinking pyramid size. A detailed analysis of the In content variation across individual pyramid facets and element distribution line profiles reveals that the cross-talk effect originates mainly from the inter-facet atom migration over the convex pyramid ridge facet boundaries rather than the concave base line facet boundaries. This is understood by first-principles calculations showing that the pyramid baseline facet boundary acts as an energy barrier for atom migration, which is much higher than that of the ridge facet boundary. The influence of the growth temperature on the inter-facet In content modulation is also presented. This work gives deep insight into the composition modulation for the realization of multi-color light-emitting devices based on the monolithic growth of InGaN NWs on pyramid textured Si substrates.

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Acknowledgements

This work was supported by the Program for Chang Jiang Scholars and Innovative Research Teams in Universities (No. IRT_17R40), Science and Technology Program of Guangzhou (No. 2019050001), the Guangdong Provincial Key Laboratory of Optical Information Materials and Technology (No. 2017B030301007), MOE International Laboratory for Optical Information Technologies, the 111 Project, and the National Natural Science Foundation of China (No. 51907171).

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Authors and Affiliations

  1. Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China

    Peng Wang, Hedong Chen, Changkun Song, Xingyu Wang, Hongjie Yin, Lujia Rao, Guofu Zhou & Richard Nötzel

  2. National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, China

    Peng Wang, Guofu Zhou & Richard Nötzel

  3. Department of Physics, Xiamen University, Xiamen, 361005, China

    Hao Wang

  4. Analysis & Testing Center, South China Normal University, Guangzhou, 510631, China

    Dan Wang

  5. Academy of Shenzhen Guohua Optoelectronics, Shenzhen, 518110, China

    Guofu Zhou

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  1. Peng Wang
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Correspondence to Peng Wang, Guofu Zhou or Richard Nötzel.

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12274_2020_3209_MOESM1_ESM.pdf

Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy

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Wang, P., Chen, H., Wang, H. et al. Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy. Nano Res. 14, 1502–1511 (2021). https://doi.org/10.1007/s12274-020-3209-7

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