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p-type HgTe/CdTe superlattices for very-long wavelength infrared detectors

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Abstract

HgTe/CdTe superlattices (SL) have been studied for applications involving the detection of very-long wavelength infrared (VLWIR) detectors. In this study, p-type HgTe/CdTe SLs were grown by molecular beam epitaxy (MBE). As-grown arsenic δ-doped HgTe/CdTe SLs and undoped HgTe/CdTe SLs were characterized before and after annealing under different conditions using XRD, temperature-dependent Hall-effect measurements, SIMS, and TEM. Incorporated arsenic atoms in a HgTe/CdTe SL were electrically activated without the typical thermal annealing of alloy HgCdTe materials.

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Authors and Affiliations

  1. EPIR Technologies Inc., 590 Territorial Dr., Unit B, 60440, Bolingbrook, IL

    H. S. Jung, P. Boieriu & C. H. Grein

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  1. H. S. Jung
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  2. P. Boieriu
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  3. C. H. Grein
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Jung, H.S., Boieriu, P. & Grein, C.H. p-type HgTe/CdTe superlattices for very-long wavelength infrared detectors. J. Electron. Mater. 35, 1341–1345 (2006). https://doi.org/10.1007/s11664-006-0265-z

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  • DOI: https://doi.org/10.1007/s11664-006-0265-z

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