Effect of Various Tin Doping Percentages on the Electrical and Structural Properties of Nanostructured Zinc Oxide Thin Films Deposited Using Sol-Gel Immersion Method for Gas Sensing Application

Shafura Karim; Syukriyah Ismail; Saurdi Ishak; Najwa Ezira Ahmed Azhar; Ruziana Mohamed; Uzer Mohd Noor; Mohamad Hafiz Mamat; Ahmad Shuhaimi Abu Bakar; Salman A.H. Alrokayan; Haseeb A. Khan; Mohamad Rusop

doi:10.4028/www.scientific.net/AMR.1109.554

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1109Effect of Various Tin Doping Percentages on the...

Effect of Various Tin Doping Percentages on the Electrical and Structural Properties of Nanostructured Zinc Oxide Thin Films Deposited Using Sol-Gel Immersion Method for Gas Sensing Application

Abstract:

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc nitrate hexahydrate as a starting material by sol-gel immersion method. Then the synthesized samples were characterized by current-voltage (I-V) measurement and FESEM. The Sn doping concentration were varied at 0.2 at.%, 0.4 at.%, 0.6 at.%, 0.8 at.% and 1.0 at.%. The result suggests that the optimum value for Sn doping concentration was 0.8 at.% which exhibited the highest conductive sample with value of 3.00 ×10^-6 S/cm.

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Periodical:

Advanced Materials Research (Volume 1109)

Pages:

554-558

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.1109.554

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Online since:

June 2015

Authors:

Shafura Karim*, Syukriyah Ismail, Saurdi Ishak, Najwa Ezira Ahmed Azhar, Ruziana Mohamed, Uzer Mohd Noor, Mohamad Hafiz Mamat, Ahmad Shuhaimi Abu Bakar, Salman A.H. Alrokayan, Haseeb A. Khan, Mohamad Rusop

Keywords:

Electrical Properties, Sn Concentration, Zinc Oxide

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